Greg Olsen

Greg Olsen has been instrumental in the development and manufacture of optoelectronic devices for dense wavelength division multiplexing fiber optic systems, spectroscopy, photonic and near infrared imaging devices. Dr. Olsen has also brought major innovations to the hydride vapor phase crystal growth of InGaAsP alloys and developed long-wavelength lasers and detectors. His background covers vapor phase epitaxy crystal growth, crystal defects, characterization of III-V compounds, and optoelectronic devices for fiber optics, near-infrared instrumentation, and imaging applications. 

Dr. Olsen remains as president, and is active in the NJ Tech Council Venture Fund. He has also been a board member of a number of high tech firms including QED, ASIP, and Finisar.

Dr. Olsen received his BS Physics in 1966, a BSEE and MS Physics (magna cum laude) in 1968 from Fairleigh Dickenson University, and a Ph.D. in Material Science in 1971 from the University of Virginia.  

From 1971 to 1972, he was a visiting scientist at the University of Port Elizabeth (South Africa), Physics Department.  

In 1972, Dr. Olsen joined RCA Laboratories at Princeton, NJ as a Member of the Technical Staff.  He brought major innovations to the hydride vapor phase crystal growth of InGaAsP alloys and developed long-wavelength lasers and detectors. His background covers vapor phase epitaxy crystal growth, crystal defects, characterization of III-V compounds, and optoelectronic devices for fiber optics, near-infrared instrumentation, and imaging applications.  

In 1984, he founded EPITAXX Inc., a high-technology company in Princeton, NJ, which manufactured fiber optic detectors and emitters.  It was acquired by Nippon Sheet Glass in 1990.

Dr. Olsen is a Fellow of the IEEE, has been active in many technical societies and has ten patents and over 100 publications.  He was a 1992 IEEE/LEOS Distinguished Lecturer and a member of the LEOS Board of Governors and CLEO Steering Committee.